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savantic semiconductor product specification silicon npn power transistors 2SC3685 description with to-3pn package high breakdown voltage high reliability fast speed applications ultrahigh-definition crt display horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 6 a i cp collector current-pulse 16 a p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3685 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 800 v v cesat collector-emitter saturation voltage i c =4a ;i b =1a 5 v v besat base-emitter saturation voltage i c =4a ;i b =1a 1.5 v i ces collector cut-off current v ce =1500v; r be =0 1 ma i ebo emitter cut-off current v eb =4v; i c =0 1 ma h fe dc current gain i c =1a ; v ce =5v 8 switching times t stg storage time 3.0 s t f fall time i c =4a;i b1 =0.8a; i b2 =-1.6a v cc =200v 0.1 0.2 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3685 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3685

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